Phototransistors NPN Phototransistor PLCC-2
Products specifications
| Collector-Emitter Breakdown Voltage | 70 V |
| Series | VEMT |
| Product | Phototransistors |
| Pd - Power Dissipation | 100 mW |
| Rise Time | 6 us |
| Collector-Emitter Saturation Voltage | 0.15 V |
| Maximum Operating Temperature | + 100 C |
| Minimum Operating Temperature | - 40 C |
| Collector- Emitter Voltage VCEO Max | 70 V |
| Dark Current | 1 nA |
| Maximum On-State Collector Current | 50 mA |
| Fall Time | 6 us |