IGBT Modules 75A Half Bridge 3 Level Inverter
Products specifications
| Continuous Collector Current at 25 C | 109 A |
| Product | IGBT Silicon Modules |
| Configuration | Dual |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Gate-Emitter Leakage Current | 200 nA, 400 nA |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 294 W |