IGBT Modules Output & SW Modules - DIAP IGBT
Products specifications
| Continuous Collector Current at 25 C | 500 A |
| Configuration | Half Bridge |
| Gate-Emitter Leakage Current | 400 nA |
| Maximum Operating Temperature | + 150 C |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Pd - Power Dissipation | 1.645 kW |
| Collector-Emitter Saturation Voltage | 2 V |