IGBT Modules Output & SW Modules - DIAP IGBT
Products specifications
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 2.5 kW |
| Gate-Emitter Leakage Current | 400 nA |
| Configuration | Single |
| Collector-Emitter Saturation Voltage | 1.9 V |
| Minimum Operating Temperature | - 40 C |
| Continuous Collector Current at 25 C | 650 A |