IGBT Modules Output & SW Modules - DIAP IGBT
Products specifications
| Continuous Collector Current at 25 C | 660 A |
| Pd - Power Dissipation | 2.66 kW |
| Maximum Operating Temperature | + 150 C |
| Configuration | Half Bridge |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Gate-Emitter Leakage Current | 400 nA |
| Collector-Emitter Saturation Voltage | 3.1 V |