IGBT Modules Output & SW Modules - IAP IGBT
Products specifications
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Minimum Operating Temperature | - 40 C |
| Gate-Emitter Leakage Current | 400 nA |
| Collector-Emitter Saturation Voltage | 1.7 V |
| Pd - Power Dissipation | 446 W |
| Maximum Operating Temperature | + 150 C |
| Continuous Collector Current at 25 C | 100 A |