IGBT Modules Output & SW Modules - IAP IGBT
Products specifications
| Collector-Emitter Saturation Voltage | 1.9 V |
| Pd - Power Dissipation | 543 W |
| Configuration | Half Bridge |
| Gate-Emitter Leakage Current | 400 nA |
| Continuous Collector Current at 25 C | 150 A |
| Maximum Operating Temperature | + 150 C |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |