IGBT Modules Output & SW Modules - DIAP IGBT
Products specifications
| Configuration | Half Bridge |
| Pd - Power Dissipation | 1.6 kW |
| Maximum Operating Temperature | + 175 C |
| Collector-Emitter Saturation Voltage | 1.6 V |
| Gate-Emitter Leakage Current | 400 nA |
| Continuous Collector Current at 25 C | 530 A |
| Collector- Emitter Voltage VCEO Max | 600 V |