MOSFETs 60V 0.24A
Lead Time: 0 Days
Products specifications
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Qg - Gate Charge | 0.6 nC |
| Rds On - Drain-Source Resistance | 3 Ohms |
| Technology | Si |
| Channel Mode | Enhancement |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Pd - Power Dissipation | 350 mW |
| Packaging | Cut Tape, MouseReel, Reel |
| Configuration | Single |
| Id - Continuous Drain Current | 240 mA |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Vgs - Gate-Source Voltage | 4.5 V |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |