MOSFETs -30V Vds 20V Vgs PowerPAK SO-8
Lead Time: 0 Days
Products specifications
| Rds On - Drain-Source Resistance | 5.5 mOhms |
| Tradename | TrenchFET |
| Channel Mode | Enhancement |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Qg - Gate Charge | 106 nC |
| Id - Continuous Drain Current | 60 A |
| Configuration | Dual |
| Technology | Si |
| Vgs - Gate-Source Voltage | 10 V |
| Number of Channels | 2 Channel |
| Packaging | Cut Tape, MouseReel, Reel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Pd - Power Dissipation | 46 W |