SI9407BDY-T1-GE3

MOSFETs -60V Vds 20V Vgs SO-8
Lead Time: 22 Days

SKU: SI9407BDY-T1-GE3

Availability: 6729 in stock

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MOSFETs -60V Vds 20V Vgs SO-8
Lead Time: 22 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	1 V
Transistor Polarity	P-Channel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	120 mOhms
Number of Channels	1 Channel
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	4.7 A
Pd - Power Dissipation	5 W
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	14.5 nC
Channel Mode	Enhancement
Tradename	TrenchFET
Vds - Drain-Source Breakdown Voltage	60 V
Configuration	Single

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Products specifications

Vgs th - Gate-Source Threshold Voltage	1 V
Transistor Polarity	P-Channel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	120 mOhms
Number of Channels	1 Channel
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	4.7 A
Pd - Power Dissipation	5 W
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	14.5 nC
Channel Mode	Enhancement
Tradename	TrenchFET
Vds - Drain-Source Breakdown Voltage	60 V
Configuration	Single