SIS434DN-T1-GE3

MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8
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SKU: SIS434DN-T1-GE3

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MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8
Lead Time: 0 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	1.2 V
Pd - Power Dissipation	52 W
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 150 C
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	40 nC
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	6.3 mOhms
Id - Continuous Drain Current	35 A
Number of Channels	1 Channel
Tradename	TrenchFET, PowerPAK
Minimum Operating Temperature	- 55 C
Configuration	Single
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	40 V

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Products specifications

Vgs th - Gate-Source Threshold Voltage	1.2 V
Pd - Power Dissipation	52 W
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 150 C
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	40 nC
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	6.3 mOhms
Id - Continuous Drain Current	35 A
Number of Channels	1 Channel
Tradename	TrenchFET, PowerPAK
Minimum Operating Temperature	- 55 C
Configuration	Single
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	40 V