SUD19P06-60-GE3

MOSFETs 60V 19A 38.5W 60mohm @ 10V
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SKU: SUD19P06-60-GE3

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R 27.94

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MOSFETs 60V 19A 38.5W 60mohm @ 10V
Lead Time: 0 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	26 nC
Id - Continuous Drain Current	18.3 A
Transistor Polarity	P-Channel
Vgs - Gate-Source Voltage	10 V
Configuration	Single
Rds On - Drain-Source Resistance	60 mOhms
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	38.5 W
Number of Channels	1 Channel
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	60 V
Tradename	TrenchFET
Packaging	Cut Tape, MouseReel, Reel
Technology	Si

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Products specifications

Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	26 nC
Id - Continuous Drain Current	18.3 A
Transistor Polarity	P-Channel
Vgs - Gate-Source Voltage	10 V
Configuration	Single
Rds On - Drain-Source Resistance	60 mOhms
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	38.5 W
Number of Channels	1 Channel
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	60 V
Tradename	TrenchFET
Packaging	Cut Tape, MouseReel, Reel
Technology	Si