SUD50N04-8M8P-4GE3

MOSFETs 40V 50A 48.1W 8.8mohm @ 10V
Lead Time: 39 Days

SKU: SUD50N04-8M8P-4GE3

Availability: 7626 in stock

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MOSFETs 40V 50A 48.1W 8.8mohm @ 10V
Lead Time: 47 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	50 A
Rds On - Drain-Source Resistance	8 mOhms
Qg - Gate Charge	37 nC
Tradename	TrenchFET
Channel Mode	Enhancement
Pd - Power Dissipation	48.1 W
Technology	Si
Minimum Operating Temperature	- 55 C
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	1.5 V
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	50 A
Rds On - Drain-Source Resistance	8 mOhms
Qg - Gate Charge	37 nC
Tradename	TrenchFET
Channel Mode	Enhancement
Pd - Power Dissipation	48.1 W
Technology	Si
Minimum Operating Temperature	- 55 C
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	1.5 V
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Number of Channels	1 Channel