MOSFETs 100V 37A 136W 43mohm @ 10V
Lead Time: 0 Days
Products specifications
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Minimum Operating Temperature | - 55 C |
| Technology | Si |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Configuration | Single |
| Pd - Power Dissipation | 136 W |
| Packaging | Cut Tape, MouseReel, Reel |
| Vgs - Gate-Source Voltage | 10 V |
| Transistor Polarity | P-Channel |
| Channel Mode | Enhancement |
| Tradename | TrenchFET |
| Rds On - Drain-Source Resistance | 43 mOhms |
| Id - Continuous Drain Current | 37.1 A |
| Maximum Operating Temperature | + 175 C |
| Qg - Gate Charge | 106 nC |
| Number of Channels | 1 Channel |