MOSFETs 60V 90A 250W 9.3mohm @ 10V
Products specifications
| Qg - Gate Charge | 240 nC |
| Transistor Polarity | P-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Technology | Si |
| Packaging | Tube |
| Rds On - Drain-Source Resistance | 7.4 mOhms |
| Number of Channels | 1 Channel |
| Channel Mode | Enhancement |
| Tradename | TrenchFET |
| Mounting Style | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Id - Continuous Drain Current | 90 A |
| Maximum Operating Temperature | + 175 C |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Configuration | Single |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Pd - Power Dissipation | 250 W |