Phototransistors T-.75 450 to 1040nm +/-40 deg
Lead Time: 0 Days
Products specifications
| Minimum Operating Temperature | - 40 C |
| Dark Current | 200 nA |
| Peak Wavelength | 825 nm |
| Product | Phototransistors |
| Collector- Emitter Voltage VCEO Max | 32 V |
| Maximum On-State Collector Current | 50 mA |
| Collector-Emitter Breakdown Voltage | 32 V |
| Pd - Power Dissipation | 100 mW |
| Collector-Emitter Saturation Voltage | 0.3 V |
| Mounting Style | Through Hole |
| Maximum Operating Temperature | + 100 C |