Phototransistors T-1 450 to 1080nm +/-25 deg
Lead Time: 63 Days
Products specifications
| Collector- Emitter Voltage VCEO Max | 70 V |
| Pd - Power Dissipation | 100 mW |
| Maximum On-State Collector Current | 50 mA |
| Maximum Operating Temperature | + 100 C |
| Product | Phototransistors |
| Collector-Emitter Breakdown Voltage | 70 V |
| Dark Current | 200 nA |
| Mounting Style | Through Hole |
| Peak Wavelength | 850 nm |
| Minimum Operating Temperature | - 40 C |
| Collector-Emitter Saturation Voltage | 0.3 V |