BC856B RF

Bipolar Transistors - BJT -80V, -0.1A, PNP Bipolar Transistor
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SKU: BC856B RF

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Bipolar Transistors - BJT -80V, -0.1A, PNP Bipolar Transistor
Lead Time: 0 Days

Products specifications

Emitter- Base Voltage VEBO	- 5 V
Collector- Base Voltage VCBO	- 80 V
Maximum DC Collector Current	- 0.1 A
Transistor Polarity	PNP
Collector- Emitter Voltage VCEO Max	- 65 V
Configuration	Single
Collector-Emitter Saturation Voltage	- 0.65 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Gain Bandwidth Product fT	100 MHz

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Products specifications

Emitter- Base Voltage VEBO	- 5 V
Collector- Base Voltage VCBO	- 80 V
Maximum DC Collector Current	- 0.1 A
Transistor Polarity	PNP
Collector- Emitter Voltage VCEO Max	- 65 V
Configuration	Single
Collector-Emitter Saturation Voltage	- 0.65 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Gain Bandwidth Product fT	100 MHz