TS13002ACT A3G

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Bipolar Transistors - BJT NPN 700V 0.3A High Voltage/Speed

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Bipolar Transistors - BJT NPN 700V 0.3A High Voltage/Speed

Products specifications

Technology	Si
Emitter- Base Voltage VEBO	9 V
Maximum DC Collector Current	0.3 A
Collector-Emitter Saturation Voltage	1.5 V
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Collector- Base Voltage VCBO	700 V
Gain Bandwidth Product fT	4 MHz
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	400 V

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Products specifications

Technology	Si
Emitter- Base Voltage VEBO	9 V
Maximum DC Collector Current	0.3 A
Collector-Emitter Saturation Voltage	1.5 V
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Collector- Base Voltage VCBO	700 V
Gain Bandwidth Product fT	4 MHz
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	400 V