Bipolar Transistors - BJT High voltage NPN Transistor
Products specifications
| Configuration | Single |
| Transistor Polarity | NPN |
| Maximum Operating Temperature | + 150 C |
| Emitter- Base Voltage VEBO | 9 V |
| Maximum DC Collector Current | 3 A |
| Technology | Si |
| Gain Bandwidth Product fT | 4 MHz |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Collector- Base Voltage VCBO | 700 V |
| Mounting Style | Through Hole |
| Collector- Emitter Voltage VCEO Max | 400 V |