Bipolar Transistors - BJT High voltage NPN Transistor with diode
Products specifications
| Maximum Operating Temperature | + 150 C |
| Maximum DC Collector Current | 4 A |
| Collector- Emitter Voltage VCEO Max | 400 V |
| Mounting Style | Through Hole |
| Configuration | Single |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 10 V |
| Technology | Si |
| Collector-Emitter Saturation Voltage | 1.1 V |
| Collector- Base Voltage VCBO | 700 V |