Bipolar Transistors - BJT High voltage NPN Transistor with diode
Products specifications
| Emitter- Base Voltage VEBO | 9 V |
| Maximum DC Collector Current | 6 A |
| Transistor Polarity | NPN |
| Technology | Si |
| Collector- Emitter Voltage VCEO Max | 400 V |
| Collector-Emitter Saturation Voltage | 0.17 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Collector- Base Voltage VCBO | 700 V |