Bipolar Transistors - BJT High voltage fast Switching NPN Transistor with diode
Products specifications
| Transistor Polarity | NPN |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Configuration | Single |
| Collector- Base Voltage VCBO | 1050 V |
| Technology | Si |
| Collector- Emitter Voltage VCEO Max | 450 V |
| Emitter- Base Voltage VEBO | 15 V |
| Maximum DC Collector Current | 4 A |
| Maximum Operating Temperature | + 150 C |