TSC5804DCP ROG

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Bipolar Transistors - BJT High voltage fast Switching NPN Transistor with diode

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Bipolar Transistors - BJT High voltage fast Switching NPN Transistor with diode

Products specifications

Collector-Emitter Saturation Voltage	0.5 V
Technology	Si
Transistor Polarity	NPN
Maximum Operating Temperature	+ 150 C
Emitter- Base Voltage VEBO	15 V
Collector- Base Voltage VCBO	1050 V
Maximum DC Collector Current	8 A
Collector- Emitter Voltage VCEO Max	450 V
Configuration	Single

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Products specifications

Collector-Emitter Saturation Voltage	0.5 V
Technology	Si
Transistor Polarity	NPN
Maximum Operating Temperature	+ 150 C
Emitter- Base Voltage VEBO	15 V
Collector- Base Voltage VCBO	1050 V
Maximum DC Collector Current	8 A
Collector- Emitter Voltage VCEO Max	450 V
Configuration	Single