MOSFETs 30V, 30A, Single N-Channel Power MOSFET
Lead Time: 140 Days
Products specifications
| Rds On - Drain-Source Resistance | 3.8 mOhms |
| Packaging | Cut Tape, Reel |
| Qg - Gate Charge | 24 nC |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Pd - Power Dissipation | 7 W |
| Vgs - Gate-Source Voltage | 10 V |
| Maximum Operating Temperature | + 175 C |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Configuration | Single |
| Number of Channels | 1 Channel |
| Channel Mode | Enhancement |
| Id - Continuous Drain Current | 30 A |
| Technology | Si |