MOSFETs -30, -64, Single P-Channel
Lead Time: 126 Days
Products specifications
| Configuration | Single |
| Rds On - Drain-Source Resistance | 7.1 mOhms |
| Number of Channels | 1 Channel |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | P-Channel |
| Channel Mode | Enhancement |
| Maximum Operating Temperature | + 150 C |
| Qg - Gate Charge | 55 nC |
| Pd - Power Dissipation | 50 W |
| Id - Continuous Drain Current | 64 A |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Packaging | Cut Tape, MouseReel, Reel |
| Minimum Operating Temperature | - 55 C |