MOSFET 800V 10Amp N channel Mosfet
Products specifications
| Maximum Operating Temperature | + 150 C |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Packaging | Reel |
| Pd - Power Dissipation | 290 W |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Channel Mode | Enhancement |
| Rds On - Drain-Source Resistance | 900 mOhms |
| Vgs - Gate-Source Voltage | 10 V |
| Minimum Operating Temperature | - 55 C |
| Qg - Gate Charge | 53 nC |
| Technology | Si |
| Id - Continuous Drain Current | 9.5 A |
| Configuration | Single |
| Number of Channels | 1 Channel |
| Mounting Style | Through Hole |
| Transistor Polarity | N-Channel |