MOSFET 60V, 54A, Single N- Channel Power MOSFET
Products specifications
| Number of Channels | 1 Channel |
| Packaging | Reel |
| Transistor Polarity | N-Channel |
| Qg - Gate Charge | 37 nC |
| Id - Continuous Drain Current | 70 A |
| Configuration | Single |
| Vgs - Gate-Source Voltage | 10 V |
| Technology | Si |
| Channel Mode | Enhancement |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Rds On - Drain-Source Resistance | 9.7 mOhms |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Pd - Power Dissipation | 125 W, 2.6 W |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |