TSM1N80CW RPG

MOSFETs 800V N Channel Pwr MOSFET

SKU: TSM1N80CW

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R 6.82

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MOSFETs 800V N Channel Pwr MOSFET

Products specifications

Transistor Polarity	N-Channel
Qg - Gate Charge	5 nC
Vds - Drain-Source Breakdown Voltage	800 V
Technology	Si
Configuration	Single
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	18 Ohms
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	2.1 W
Number of Channels	1 Channel
Packaging	Cut Tape, Reel
Vgs th - Gate-Source Threshold Voltage	3 V
Id - Continuous Drain Current	300 mA
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	10 V

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Products specifications

Transistor Polarity	N-Channel
Qg - Gate Charge	5 nC
Vds - Drain-Source Breakdown Voltage	800 V
Technology	Si
Configuration	Single
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	18 Ohms
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	2.1 W
Number of Channels	1 Channel
Packaging	Cut Tape, Reel
Vgs th - Gate-Source Threshold Voltage	3 V
Id - Continuous Drain Current	300 mA
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	10 V