MOSFET 20V P channel MOSFET
Products specifications
| Technology | Si |
| Channel Mode | Enhancement |
| Id - Continuous Drain Current | 2.8 A |
| Number of Channels | 1 Channel |
| Rds On - Drain-Source Resistance | 80 mOhms |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 450 mV |
| Packaging | Cut Tape, MouseReel, Reel |
| Vgs - Gate-Source Voltage | 4.5 V |
| Configuration | Single |
| Pd - Power Dissipation | 900 mW |
| Minimum Operating Temperature | - 55 C |
| Qg - Gate Charge | 5.8 nC |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Maximum Operating Temperature | + 150 C |