MOSFETs 20V, 3.9A, Single N-Channel Power MOSFET
Products specifications
| Technology | Si |
| Pd - Power Dissipation | 1.25 W |
| Vgs th - Gate-Source Threshold Voltage | 650 mV |
| Rds On - Drain-Source Resistance | 40 mOhms |
| Channel Mode | Enhancement |
| Id - Continuous Drain Current | 2.8 A |
| Minimum Operating Temperature | - 55 C |
| Transistor Polarity | N-Channel |
| Packaging | Cut Tape, MouseReel, Reel |
| Maximum Operating Temperature | + 150 C |
| Configuration | Single |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Qg - Gate Charge | 5.4 nC |
| Vgs - Gate-Source Voltage | 4.5 V |