MOSFETs -60V, -3.1A, Single P-Channel Power MOSFET
Lead Time: 112 Days
Products specifications
| Channel Mode | Enhancement |
| Number of Channels | 1 Channel |
| Id - Continuous Drain Current | 3.1 A |
| Configuration | Single |
| Technology | Si |
| Packaging | Cut Tape, Reel |
| Qg - Gate Charge | 8.2 nC |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Rds On - Drain-Source Resistance | 160 mOhms |
| Maximum Operating Temperature | + 50 C |
| Vgs - Gate-Source Voltage | 10 V |
| Pd - Power Dissipation | 1.56 W |
| Vds - Drain-Source Breakdown Voltage | 60 V |