MOSFETs 40V, 3.9A, Single N-Channel Power MOSFET
Products specifications
| Number of Channels | 1 Channel |
| Pd - Power Dissipation | 1.25 W |
| Transistor Polarity | N-Channel |
| Qg - Gate Charge | 10 nC |
| Configuration | Single |
| Rds On - Drain-Source Resistance | 36 mOhms |
| Channel Mode | Enhancement |
| Minimum Operating Temperature | - 55 C |
| Technology | Si |
| Maximum Operating Temperature | + 150 C |
| Vgs - Gate-Source Voltage | 10 V |
| Id - Continuous Drain Current | 3.9 A |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Packaging | Cut Tape, Reel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |