TSM3911DCX6 RFG

MOSFETs -20V, -2.2A, Dual P-Channel Power MOSFET

SKU: TSM3911DCX6 RFG

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R 26.66

R 16.66

R 10.92

R 8.41

R 7.61

R 5.66

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MOSFETs -20V, -2.2A, Dual P-Channel Power MOSFET

Products specifications

Rds On - Drain-Source Resistance	115 mOhms
Vgs - Gate-Source Voltage	4.5 V
Configuration	Dual
Packaging	Cut Tape, Reel
Pd - Power Dissipation	1.15 W
Vds - Drain-Source Breakdown Voltage	20 V
Channel Mode	Enhancement
Qg - Gate Charge	15.23 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	450 mV
Id - Continuous Drain Current	2.2 A
Transistor Polarity	P-Channel, PNP
Number of Channels	2 Channel
Technology	Si

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Products specifications

Rds On - Drain-Source Resistance	115 mOhms
Vgs - Gate-Source Voltage	4.5 V
Configuration	Dual
Packaging	Cut Tape, Reel
Pd - Power Dissipation	1.15 W
Vds - Drain-Source Breakdown Voltage	20 V
Channel Mode	Enhancement
Qg - Gate Charge	15.23 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	450 mV
Id - Continuous Drain Current	2.2 A
Transistor Polarity	P-Channel, PNP
Number of Channels	2 Channel
Technology	Si