MOSFET MOSFET, Single, N-Ch Planar, 900V, 2.5A
Products specifications
| Channel Mode | Enhancement |
| Technology | Si |
| Qg - Gate Charge | 17 nC |
| Maximum Operating Temperature | + 150 C |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Mounting Style | Through Hole |
| Rds On - Drain-Source Resistance | 4.3 Ohms |
| Configuration | Single |
| Pd - Power Dissipation | 32 W |
| Id - Continuous Drain Current | 2.5 A |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 10 V |
| Number of Channels | 1 Channel |
| Packaging | Tube |