MOSFETs -60V, -20A, Single P-Channel Power MOSFET
Products specifications
| Technology | Si |
| Id - Continuous Drain Current | 20 A |
| Channel Mode | Enhancement |
| Packaging | Cut Tape, Reel |
| Vgs th - Gate-Source Threshold Voltage | 1.6 V |
| Qg - Gate Charge | 22.4 nC |
| Minimum Operating Temperature | - 50 C |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Pd - Power Dissipation | 40 W |
| Maximum Operating Temperature | + 150 C |
| Vgs - Gate-Source Voltage | 10 V |
| Configuration | Single |
| Rds On - Drain-Source Resistance | 39 mOhms |
| Number of Channels | 1 Channel |