MOSFETs -30V, -7.1A, Dual P-Channel Power MOSFET
Products specifications
| Packaging | Reel |
| Maximum Operating Temperature | + 150 C |
| Vgs - Gate-Source Voltage | 10 V |
| Minimum Operating Temperature | - 55 C |
| Rds On - Drain-Source Resistance | 20 mOhms |
| Channel Mode | Enhancement |
| Pd - Power Dissipation | 2 W |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Configuration | Dual |
| Transistor Polarity | P-Channel, PNP |
| Qg - Gate Charge | 33 nC |
| Number of Channels | 2 Channel |
| Technology | Si |
| Id - Continuous Drain Current | 7.1 A |