TSM4936DCS RLG

MOSFETs 30V, 5.9A, Dual N-Channel Power MOSFET

SKU: TSM4936DCS RLG

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R 19.86

R 13.41

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R 9.48

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MOSFETs 30V, 5.9A, Dual N-Channel Power MOSFET

Products specifications

Vgs th - Gate-Source Threshold Voltage	1 V
Pd - Power Dissipation	3 W
Vgs - Gate-Source Voltage	10 V
Technology	Si
Qg - Gate Charge	13 nC
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, Reel
Number of Channels	2 Channel
Rds On - Drain-Source Resistance	32 mOhms
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	5.9 A
Vds - Drain-Source Breakdown Voltage	30 V
Configuration	Dual
Transistor Polarity	N-Channel

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Products specifications

Vgs th - Gate-Source Threshold Voltage	1 V
Pd - Power Dissipation	3 W
Vgs - Gate-Source Voltage	10 V
Technology	Si
Qg - Gate Charge	13 nC
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, Reel
Number of Channels	2 Channel
Rds On - Drain-Source Resistance	32 mOhms
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	5.9 A
Vds - Drain-Source Breakdown Voltage	30 V
Configuration	Dual
Transistor Polarity	N-Channel