MOSFETs 600V, 4A, Single N-Channel Power MOSFET
Products specifications
| Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Channel Mode | Enhancement |
| Packaging | Reel |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Pd - Power Dissipation | 50 W |
| Rds On - Drain-Source Resistance | 2.2 Ohms |
| Technology | Si |
| Vgs - Gate-Source Voltage | 10 V |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Maximum Operating Temperature | + 150 C |
| Mounting Style | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Qg - Gate Charge | 14.5 nC |
| Id - Continuous Drain Current | 4 A |