MOSFET 650V 4AMP N-Channel Power MOSFET
Products specifications
| Channel Mode | Enhancement |
| Configuration | Single |
| Pd - Power Dissipation | 70 W |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 4 A |
| Rds On - Drain-Source Resistance | 2.7 Ohms |
| Technology | Si |
| Qg - Gate Charge | 13.46 nC |
| Transistor Polarity | N-Channel |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Vgs - Gate-Source Voltage | 10 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Packaging | Reel |