MOSFETs -20V, -4.7A, Single P-Channel Power MOSFET
Lead Time: 112 Days
Products specifications
| Maximum Operating Temperature | + 150 C |
| Qg - Gate Charge | 9.6 nC |
| Id - Continuous Drain Current | 4.7 A |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Rds On - Drain-Source Resistance | 57 mOhms |
| Minimum Operating Temperature | - 55 C |
| Packaging | Cut Tape, Reel |
| Vgs th - Gate-Source Threshold Voltage | 600 mV |
| Technology | Si |
| Pd - Power Dissipation | 1.56 W |
| Channel Mode | Enhancement |
| Configuration | Single |
| Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel |
| Vgs - Gate-Source Voltage | 4.5 V |