MOSFETs 30V, 107A, Dual N-Channel Power MOSFET;30V, 38A, Dual N-Channel Power MOSFET
Products specifications
| Id - Continuous Drain Current | 38 A, 107 A |
| Rds On - Drain-Source Resistance | 8.8 mOhms, 2.7 mOhms |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Pd - Power Dissipation | 30 W, 69 W |
| Technology | Si |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Qg - Gate Charge | 9.3 nC, 49 nC |
| Packaging | Reel |
| Number of Channels | 2 Channel |
| Transistor Polarity | N-Channel |
| Channel Mode | Enhancement |
| Configuration | Dual |
| Vgs - Gate-Source Voltage | 10 V |