MOSFET 250V 8Amp N channel Power Mosfet
Products specifications
| Pd - Power Dissipation | 52 W |
| Mounting Style | Through Hole |
| Channel Mode | Enhancement |
| Minimum Operating Temperature | - |
| Packaging | Reel |
| Rds On - Drain-Source Resistance | 500 mOhms |
| Maximum Operating Temperature | + 150 C |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Qg - Gate Charge | 8.4 nC |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 250 V |
| Id - Continuous Drain Current | 8 A |
| Configuration | Single |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |