MOSFETs 600V Power MOSFET Superjunction N-chan
Products specifications
| Transistor Polarity | N-Channel |
| Qg - Gate Charge | 20.5 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Technology | Si |
| Pd - Power Dissipation | 125 W |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Configuration | Single |
| Number of Channels | 1 Channel |
| Packaging | Cut Tape, Reel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Rds On - Drain-Source Resistance | 310 mOhms |
| Channel Mode | Enhancement |
| Id - Continuous Drain Current | 11 A |