TSM60NB099PW C1G

MOSFETs 600V, 38A, Single N-Channel Power MOSFET
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SKU: TSM60NB099PW C1G

Availability: 1830 in stock

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R 245.81

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R 125.60

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MOSFETs 600V, 38A, Single N-Channel Power MOSFET
Lead Time: 0 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Vgs - Gate-Source Voltage	10 V
Rds On - Drain-Source Resistance	86 mOhms
Technology	Si
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	38 A
Pd - Power Dissipation	329 W
Qg - Gate Charge	62 nC
Vgs th - Gate-Source Threshold Voltage	2 V
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Vgs - Gate-Source Voltage	10 V
Rds On - Drain-Source Resistance	86 mOhms
Technology	Si
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	38 A
Pd - Power Dissipation	329 W
Qg - Gate Charge	62 nC
Vgs th - Gate-Source Threshold Voltage	2 V
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Number of Channels	1 Channel