MOSFET MOSFET, Single, N-Ch SJ G2, 600V, 24A
Products specifications
| Transistor Polarity | N-Channel |
| Channel Mode | Enhancement |
| Packaging | Tube |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Technology | Si |
| Minimum Operating Temperature | - 55 C |
| Vgs - Gate-Source Voltage | 10 V |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Qg - Gate Charge | 43 nC |
| Rds On - Drain-Source Resistance | 124 mOhms |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 24 A |
| Pd - Power Dissipation | 62.5 W |