MOSFET 600V, 4A, 1.4OHMS N Channel Power Mosfet
Products specifications
| Packaging | Reel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 7.12 nC |
| Pd - Power Dissipation | 28.4 W |
| Rds On - Drain-Source Resistance | 1 Ohms |
| Mounting Style | Through Hole |
| Vgs - Gate-Source Voltage | 30 V |
| Number of Channels | 1 Channel |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Id - Continuous Drain Current | 3 A |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Channel Mode | Enhancement |
| Maximum Operating Temperature | + 150 C |
| Configuration | Single |
| Minimum Operating Temperature | - 55 C |