MOSFET 600V 4Amp 0.9OHMS N channel Power Mosfet
Products specifications
| Maximum Operating Temperature | + 150 C |
| Technology | Si |
| Minimum Operating Temperature | - 55 C |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Id - Continuous Drain Current | 4 A |
| Qg - Gate Charge | 9.6 nC |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Pd - Power Dissipation | 36.8 W |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Packaging | Reel |
| Vgs - Gate-Source Voltage | 30 V |
| Rds On - Drain-Source Resistance | 690 mOhms |
| Configuration | Single |
| Channel Mode | Enhancement |