MOSFET 150V, 9A, 65mohm, N-Channel Power MOSFET
Products specifications
| Vgs - Gate-Source Voltage | 10 V |
| Pd - Power Dissipation | 12.5 W |
| Configuration | Single |
| Qg - Gate Charge | 37 nC |
| Id - Continuous Drain Current | 9 A |
| Technology | Si |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Channel Mode | Enhancement |
| Minimum Operating Temperature | - |
| Packaging | Reel |
| Number of Channels | 1 Channel |
| Maximum Operating Temperature | + 150 C |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Rds On - Drain-Source Resistance | 51 mOhms |